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The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells

Identifieur interne : 000019 ( Main/Repository ); précédent : 000018; suivant : 000020

The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells

Auteurs : RBID : Pascal:14-0084011

Descripteurs français

Pascal (Inist)
- Haute température, Cellule couche mince, Cellule solaire, Caractéristique électrique, Grosseur grain, Granulométrie, Profil profondeur, Accord fréquence, Etude comparative, Norme, Energie solaire, Codépôt, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Cuivre, Cu(In,Ga)Se2.
Wicri :
- concept : Norme, Cuivre.

English descriptors

KwdEn :
- Codeposition, Comparative study, Copper, Copper selenides, Depth profile, Electrical characteristic, Gallium selenides, Grain size, Grain size analysis, High temperature, Indium selenides, Quaternary compound, Solar cell, Solar energy, Standards, Thin film cell, Tuning.

Abstract

The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se₂ (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga] + [In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature.

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Pascal:14-0084011

Le document en format XML

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 thin film solar cells</title>
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<author><name sortKey="Kosik Williams, C" uniqKey="Kosik Williams C">C. Kosik Williams</name>
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<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0084011 INIST</idno>
<idno type="RBID">Pascal:14-0084011</idno>
<idno type="wicri:Area/Main/Corpus">000100</idno>
<idno type="wicri:Area/Main/Repository">000019</idno>
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<seriesStmt><idno type="ISSN">0927-0248</idno>
<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
</seriesStmt>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Codeposition</term>
<term>Comparative study</term>
<term>Copper</term>
<term>Copper selenides</term>
<term>Depth profile</term>
<term>Electrical characteristic</term>
<term>Gallium selenides</term>
<term>Grain size</term>
<term>Grain size analysis</term>
<term>High temperature</term>
<term>Indium selenides</term>
<term>Quaternary compound</term>
<term>Solar cell</term>
<term>Solar energy</term>
<term>Standards</term>
<term>Thin film cell</term>
<term>Tuning</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Haute température</term>
<term>Cellule couche mince</term>
<term>Cellule solaire</term>
<term>Caractéristique électrique</term>
<term>Grosseur grain</term>
<term>Granulométrie</term>
<term>Profil profondeur</term>
<term>Accord fréquence</term>
<term>Etude comparative</term>
<term>Norme</term>
<term>Energie solaire</term>
<term>Codépôt</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Cuivre</term>
<term>Cu(In,Ga)Se2</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Norme</term>
<term>Cuivre</term>
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<front><div type="abstract" xml:lang="en">The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se<sub>2</sub>
 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga] + [In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature.</div>
</front>
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 thin film solar cells</s1>
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<fA11 i1="01" i2="1"><s1>SALOME (P. M. P.)</s1>
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<fA11 i1="02" i2="1"><s1>HULTQVIST (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>FJÄLLSTRÖM (V.)</s1>
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<fA11 i1="04" i2="1"><s1>VERMANG (B.)</s1>
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<fA11 i1="05" i2="1"><s1>EDOFF (M.)</s1>
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<fA11 i1="06" i2="1"><s1>AITKEN (B.)</s1>
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<fA11 i1="07" i2="1"><s1>ZHANG (K.)</s1>
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<fA11 i1="08" i2="1"><s1>FULLER (K.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>KOSIK WILLIAMS (C.)</s1>
</fA11>
<fA14 i1="01"><s1>Ångström Solar Center, Solid State Electronics, Uppsala University, Ångström Laboratory, PO Box 534</s1>
<s2>751 21 Uppsala</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>Corning Incorporated</s1>
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<fA20><s1>166-170</s1>
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<fA60><s1>P</s1>
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<fA61><s0>A</s0>
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</fA66>
<fC01 i1="01" l="ENG"><s0>The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se<sub>2</sub>
 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga] + [In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
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</fC02>
<fC02 i1="03" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Haute température</s0>
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<fC03 i1="01" i2="X" l="ENG"><s0>High temperature</s0>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Electrical characteristic</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Grosseur grain</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Grain size</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Grosor grano</s0>
<s5>05</s5>
</fC03>
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<s5>06</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Depth profile</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Perfil profundidad</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Accord fréquence</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Tuning</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Sintonización frecuencia</s0>
<s5>08</s5>
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<s5>09</s5>
</fC03>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Standards</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Norma</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Energie solaire</s0>
<s5>11</s5>
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<fC03 i1="11" i2="X" l="ENG"><s0>Solar energy</s0>
<s5>11</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Energía solar</s0>
<s5>11</s5>
</fC03>
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<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Codeposition</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Codeposición</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Séléniure de cuivre</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Composé quaternaire</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Quaternary compound</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Compuesto cuaternario</s0>
<s5>25</s5>
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<fC03 i1="17" i2="X" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Cobre</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>111</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
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The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells

The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells

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